Connecting Theory and Application of Optoelectronic Devices  
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Sept. 14 -18, 2009

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Invited Talks

Advanced Vectorial Simulation of VCSELs with Nano Structures
Il-Sug Chung and Jesper Mørk, Technical University of Denmark, Denmark

Effects of Strain Distribution on the Optical Gain of InGaN/AlInGaN Quantum Wells
Doyeol Ahn, University of Seoul, Korea

Unified Approach to the Modelling of Optoelectronic Nanostructures
Sebastian Steiger, ETH Zurich, Switzerland

Ge/Si Photodetectors and Group IV Alloy Based Photodetector Materials
Prasanta Basu, University of Calcutta, India

VLSI Photonics: Science and Engineering of Micro/Nano-Photonic Integration
El-Hang Lee, Inha University, Korea

Light-Emitting Diodes for Space Applications
Wei Lu, Shanghai Institute of Technical Physics, China

3-Dimensional Current Flow Analysis in InGaN Light Emitting Diodes
Jong-In Shim, Hanyang University, Korea

Superperiodic Photonic-Crystal LEDs with Highly Directive Luminance
Hugh Song, Gwangju Institute of Science and Technlogy, Korea

High-Q Air-Slot Photonic Crystal Cavities
Hideaki Taniyama, NTT Basic Research Lab, Japan

Maximum Output Power of Broad-Area Laser Diodes
Hans Wenzel, Ferdinand Braun Institute, Germany



supported by

RSoft Design Group

Crosslight Software
Gwangju CVB
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